Silicon Nitride Rod
- Brand Name
- 3X Ceramic Parts
- Material Type
- silicon nitride
- MOQ
- 5 pieces
- Specification
- customized
- Density
- >3.2g/cm3
- Max working temperature
- 1200 ℃
- Thermal Conductivity
- 15~20 W/m.k
- Compressive Strength
- 2500 Mpa
- Flexural Strength
- >600 Mpa
Silicon Nitride Rod Description:
Silicon Nitride Rod is a commonly used ceramic material in the metallurgical industry due to the even performance in high temperature. Silicon Nitride Rod has excellent thermal shock resistance due to the microstructure. The creep and oxidation resistance of Si3N4 is also superior, its low thermal conductivity and high wear resistance also make it an outstanding material that can withstand conditions of most industrial applications.
There are 5 different methods to produce Silicon Nitride Welding Rod including SRBSN, GPSN, HPSN, HIP-SN, and RBSN, make the application and working material different slightly. In these 5 methods of production, GPSN is most commonly used to produce Silicon Nitride components.
Silicon Nitride Rod Applications:
Silicon Nitride Rod can make products including:
- Advanced ceramic tubes
- Bearing rollers
- Ceramic cutting materials
- Cyrol bearing rollers
- Nozzles
- Seal rings
- Tube forming tools
- Mechanical engineering special applications
Silicon Nitride Welding Rod Specifications:
|
Property |
Unit |
|
|
Color |
Grey |
|
|
Mechanical Properties |
||
|
Density |
g/cm3 |
3.21 |
|
Compressive Strength |
MPa |
3000 |
|
Flexural Strength |
MPa |
800 |
|
Weibull-Modulus m |
15 |
|
|
Fracture Toughness KIc |
MPa m^1/2 |
6.5 |
|
Young‘s Modulus E |
GPa |
320 |
|
Poisson Ratio |
0.28 |
|
|
Hardness Vickers (HV 1) |
GPa |
16 |
|
Thermal Properties |
||
|
Maximum Temperature |
||
|
Inert Gas |
°C |
1200 |
|
Air |
°C |
1100 |
|
Thermal Conductivity |
25 |
|
|
@ 20°C |
W/mK |
28 |
|
@ 1000 |
W/mK |
16 |
|
Thermal Expansion |
||
|
20–100°C |
10-6/K |
2 |
|
20–1000°C |
10-6/K |
3.5 |
|
Thermal Shock parameter R1 |
K |
600 |
|
Thermal Shock parameter R2 |
W/mm |
15 |
|
Electrical Properties |
||
|
Resistivity at 20°C |
Ωcm |
10^12 |
|
Resistivity at 800°C |
Ωcm |
10^7 |
|
Dielectric constant |
1 MHz |
6 |
